IRFB3207Z transistor - N-MOSFET, 75V, 170A, 300W (TO220AB) Elektroknik Rottespærre 110 mmKan bruges i

Description

Rottespærre 110 mmKan bruges i kloak ved feks tagrender/tagnedløbsbrønde

Bruttovægt: 38

som blandt andet består af en kraftig ESP32 processor

Type of integrated circuit: audio amplifier

IRFB3207Z transistor - N-MOSFET, 75V, 170A, 300W (TO220AB) Elektroknik Rottespærre 110 mmKan bruges iTekniske detaljer: Producent: INTERNATIONAL RECTIFIER Transistor type: N MOSFET Polarisation: Unipolar Transistor variant: HEXFET Drain source spnding: 75V Drain strm: 170A Effekt: 300W Hus: TO220AB Gate source spnding: 20V On state modstand: 4,1mOhm Junction to case termisk modstand: 500mK W Montage: Printhul Gate charge: 120nC

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